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max. n-channel p-channel v ds drain-to-source voltage 20 -20 i d @ t a = 25c continuous drain current, v gs @ 10v 2.7 -2.2 i d @ t a = 70c continuous drain current, v gs @ 10v 2.2 -1.7 i dm pulsed drain current 11 -9.0 p d @t a = 25c power dissipation 0.96 w p d @t a = 70c power dissipation 0.62 linear derating factor 7.7 mw/c v gs gate-to-source voltage 12 v t j, t stg junction and storage temperature range c n-ch p-ch v dss 20v -20v r ds(on) 0.090 ? 0.135 ? hexfet ? power mosfet 04/20/10 irf5851pbf description parameter typ. max. units r ja maximum junction-to-ambient ??? 130 c/w thermal resistance www.irf.com 1 these n and p channel mosfets from international rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area. this benefit provides the designer with an extremely efficient device for use in battery and load management applications. this dual tsop-6 package is ideal for applications where printed circuit board space is at a premium and where maximum functionality is required. with two die per package, the irf5851 can provide the functionality of two sot-23 packages in a smaller footprint. its unique thermal design and r ds(on) reduction enables an increase in current-handling capability.
absolute maximum ratings -55 to + 150 ultra low on-resistance dual n and p channel mosfet surface mount available in tape & reel low gate charge lead-free halogen-free tsop-6 pd-95341a
irf5851pbf 2 www.irf.com parameter min. typ. max. units conditions n-ch 20 ? ? v gs = 0v, i d = 250a p-ch -20 ? ? v gs = 0v, i d = -250a n-ch ? 0.016 ? reference to 25c, i d = 1ma p-ch ? -0.011 ? reference to 25c, i d = -1ma ? ? 0.090 v gs = 4.5v, i d = 2.7a ? ? 0.120 v gs = 2.5v, i d = 2.2a ? ? 0.135 v gs = -4.5v, i d = -2.2a ? ? 0.220 v gs = -2.5v, i d = -1.7a n-ch 0.60 ? 1.25 v ds = v gs , i d = 250a p-ch -0.45 ? -1.2 v ds = v gs , i d = -250a n-ch 5.2 ? ? v ds = 10v, i d = 2.7a p-ch 3.5 ? ? v ds = -10v, i d = -2.2a n-ch ? ? 1.0 v ds = 16 v, v gs = 0v p-ch ? ? -1.0 v ds = -16v, v gs = 0v n-ch ? ? 25 v ds = 16 v, v gs = 0v, t j = 70c p-ch ? ? -25 v ds = -16v, v gs = 0v, t j = 70c i gss gate-to-source forward leakage n-p ?? ? 100 v gs = 12v n-ch ? 4.0 6.0 p-ch ? 3.6 5.4 n-ch ? 0.95 ? p-ch ? 0.66 ? n-ch ? 0.83 ? p-ch ? 5.7 ? n-ch ? 6.6 ? p-ch ? 8.3 ? n-ch ? 1.2 ? p-ch ? 14 ? n-ch ? 15 ? p-ch ? 31 ? n-ch ? 2.4 ? p-ch ? 28 ? n-ch ? 400 ? p-ch ? 320 ? n-ch ? 48 ? p-ch ? 56 ? n-ch ? 32 ? p-ch ? 40 ? v (br)dss drain-to-source breakdown voltage ? v (br)dss / ? t j breakdown voltage temp. coefficient r ds(on) static drain-to-source on-resistance v gs(th) gate threshold voltage g fs forward transconductance i dss drain-to-source leakage current q g total gate charge q gs gate-to-source charge q gd gate-to-drain ("miller") charge t d(on) turn-on delay time t r rise time t d(off) turn-off delay time t f fall time c iss input capacitance c oss output capacitance c rss reverse transfer capacitance

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n-channel i d = 2.7a, v ds = 10v, v gs = 4.5v p-channel i d = -2.2a, v ds = -10v, v gs = -4.5v n-channel v dd = 10v, i d = 1.0a, r g = 6.2 ? , v gs = 4.5v p-channel v dd = -10v, i d = -1.0a, r g = 6.0 ? v gs = -4.5v n-channel v gs = 0v, v ds = 15v, ? = 1.0mhz p-channel v gs = 0v, v ds = -15v, ? = 1.0mhz n-ch p-ch repetitive rating; pulse width limited by max. junction temperature. ( see fig. 10 & 26 ) surface mounted on fr-4 board, t 10sec. pulse width 400s; duty cycle 2%. notes: parameter min. typ. max. units conditions n-ch ? ? 0.96 p-ch ? ? -0.96 n-ch ? ? 11 p-ch ? ? -9.0 n-ch ? ? 1.2 t j = 25c, i s = 0.96a, v gs = 0v p-ch ? ? -1.2 t j = 25c, i s = -0.96a, v gs = 0v n-ch ? 25 38 p-ch ? 23 35 n-ch ? 6.5 9.8 p-ch ? 7.7 12
i s continuous source current (body diode) i sm pulsed source current (body diode) v sd diode forward voltage t rr reverse recovery time q rr reverse recovery charge n-channel t j = 25c, i f = 0.96a, di/dt = 100a/s p-channel t j = 25c, i f = -0.96a, di/dt = -100a/s
irf5851pbf www.irf.com 3 n-channel fig 3. typical transfer characteristics fig 2. typical output characteristics fig 1. typical output characteristics 0.1 1 10 100 0.1 1 10 100 20s pulse width t = 25 c j top bottom vgs 7.5v 4.5v 3.5v 3.0v 2.5v 2.0v 1.75v 1.5v v , drain-to-source voltage (v) i , drain-to-source current (a) ds d 1.50v 0.1 1 10 100 0.1 1 10 100 20s pulse width t = 150 c j top bottom vgs 7.5v 4.5v 3.5v 3.0v 2.5v 2.0v 1.75v 1.5v v , drain-to-source voltage (v) i , drain-to-source current (a) ds d 1.50v 0.1 1 10 100 1.5 2.0 2.5 3.0 v = 15v 20s pulse width ds v , gate-to-source voltage (v) i , drain-to-source current (a) gs d t = 25 c j t = 150 c j -60 -40 -20 0 20 40 60 80 100 120 140 160 0.0 0.5 1.0 1.5 2.0 t , junction temperature ( c) r , drain-to-source on resistance (normalized) j ds(on) v = i = gs d 4.5v 2.7a fig 4. normalized on-resistance vs. temperature
irf5851pbf 4 www.irf.com fig 6. typical gate charge vs. gate-to-source voltage fig 5. typical capacitance vs. drain-to-source voltage fig 8. maximum safe operating area 1 10 100 0 100 200 300 400 500 600 v , drain-to-source voltage (v) c, capacitance (pf) ds v c c c = = = = 0v, c c c f = 1mhz + c + c c shorted gs iss gs gd , ds rss gd oss ds gd c iss c oss c rss 0 2 4 6 8 0 2 4 6 8 10 q , total gate charge (nc) v , gate-to-source voltage (v) g gs i = d 2.7a v = 10v ds v = 16v ds fig 7. typical source-drain diode forward voltage 0.1 1 10 100 0.1 1 10 100 operation in this area limited by r ds(on) single pulse t t = 150 c = 25 c j a v , drain-to-source voltage (v) i , drain current (a) i , drain current (a) ds d 100us 1ms 10ms n-channel 0.1 1 10 100 0.4 0.6 0.8 1.0 1.2 1.4 v ,source-to-drain voltage (v) i , reverse drain current (a) sd sd v = 0 v gs t = 25 c j t = 150 c j
irf5851pbf www.irf.com 5 fig 10. typical effective transient thermal impedance, junction-to-ambient fig 9. maximum drain current vs. case temperature 25 50 75 100 125 150 0.0 0.5 1.0 1.5 2.0 2.5 3.0 t , case temperature ( c) i , drain current (a) c d 0.1 1 10 100 1000 0.00001 0.0001 0.001 0.01 0.1 1 10 notes: 1. duty factor d = t / t 2. peak t = p x z + t 1 2 j dm thja a p t t dm 1 2 t , rectangular pulse duration (sec) thermal response (z ) 1 thja 0.01 0.02 0.05 0.10 0.20 d = 0.50 single pulse (thermal response) fig 10a. switching time test circuit v ds 90% 10% v gs t d(on) t r t d(off) t f fig 10b. switching time waveforms
1 0.1 %
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irf5851pbf 6 www.irf.com n-channel fig 12. typical on-resistance vs. drain current fig 11. typical on-resistance vs. gate voltage 2.0 3.0 4.0 5.0 6.0 7.0 8.0 v gs, gate -to -source voltage (v) 0.06 0.08 0.10 0.12 0.14 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( ? ) i d = 2.7a fig 13b. gate charge test circuit fig 13a. basic gate charge waveform q g q gs q gd v g charge d.u.t. v ds i d i g 3ma v gs .3 f 50k ? .2 f 12v current regulator same type as d.u.t. current sampling resistors + - 024681012 i d , drain current (a) 0.00 0.10 0.20 0.30 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( ? ) v gs = 4.5v v gs = 2.5v
irf5851pbf www.irf.com 7 fig 14. threshold voltage vs. tempera- ture typical power vs. time n-channel -75 -50 -25 0 25 50 75 100 125 150 t j , temperature ( c ) 0.4 0.6 0.8 1.0 1.2 v g s ( t h ) , v a r i a c e ( v ) i d = 250a 0.001 0.010 0.100 1.000 10.000 time (sec) 0 4 8 12 16 20 24 p o w e r ( w )
irf5851pbf 8 www.irf.com p-channel fig 18. typical transfer characteristics fig 17. typical output characteristics fig 16. typical output characteristics -60 -40 -20 0 20 40 60 80 100 120 140 160 0.0 0.5 1.0 1.5 2.0 t , junction temperature ( c) r , drain-to-source on resistance (normalized) j ds(on) v = i = gs d -4.5v -2.2a fig 19. normalized on-resistance vs. temperature 0.1 1 10 1.2 1.6 2.0 2.4 2.8 v = -15v 20s pulse width ds -v , gate-to-source voltage (v) -i , drain-to-source current (a) gs d t = 25 c j t = 150 c j 0.01 0.1 1 10 100 0.1 1 10 100 20s pulse width t = 25 c j top bottom vgs -7.0v -5.0v -4.5v -2.5v -2.0v -1.8v -1.5v -1.2v -v , drain-to-source voltage (v) -i , drain-to-source current (a) ds d -1.2v 0.1 1 10 100 0.1 1 10 100 20s pulse width t = 150 c j top bottom vgs -7.0v -5.0v -4.5v -2.5v -2.0v -1.8v -1.5v -1.2v -v , drain-to-source voltage (v) -i , drain-to-source current (a) ds d -1.2v
irf5851pbf www.irf.com 9 fig 21. typical gate charge vs. gate-to-source voltage fig 20. typical capacitance vs. drain-to-source voltage fig 23. maximum safe operating area 1 10 100 0 100 200 300 400 500 -v , drain-to-source voltage (v) c, capacitance (pf) ds v c c c = = = = 0v, c c c f = 1mhz + c + c c shorted gs iss gs gd , ds rss gd oss ds gd c iss c oss c rss 0 2 4 6 8 0 2 4 6 8 10 q , total gate charge (nc) -v , gate-to-source voltage (v) g gs i = d -2.2a v = -10v ds v = -16v ds fig 22. typical source-drain diode forward voltage 0.1 1 10 100 0.1 1 10 100 operation in this area limited by r ds(on) single pulse t t = 150 c = 25 c j a -v , drain-to-source voltage (v) -i , drain current (a) i , drain current (a) ds d 100us 1ms 10ms p-channel 0.1 1 10 0.4 0.6 0.8 1.0 1.2 1.4 -v ,source-to-drain voltage (v) -i , reverse drain current (a) sd sd v = 0 v gs t = 25 c j t = 150 c j
irf5851pbf 10 www.irf.com fig 26. typical effective transient thermal impedance, junction-to-ambient fig 24. maximum drain current vs. junction temperature 25 50 75 100 125 150 0.0 0.5 1.0 1.5 2.0 2.5 -i , drain current (a) d 0.1 1 10 100 1000 0.00001 0.0001 0.001 0.01 0.1 1 10 notes: 1. duty factor d = t / t 2. peak t = p x z + t 1 2 j dm thja a p t t dm 1 2 t , rectangular pulse duration (sec) thermal response (z ) 1 thja 0.01 0.02 0.05 0.10 0.20 d = 0.50 single pulse (thermal response)
1 0.1 % + - v ds 90% 10% v gs t d(on) t r t d(off) t f fig 25a. switching time test circuit fig 25b. switching time waveforms p-channel
irf5851pbf www.irf.com 11 fig 28. typical on-resistance vs. drain current fig 27. typical on-resistance vs. gate voltage fig 29b. gate charge test circuit fig 29a. basic gate charge waveform q g q gs q gd v g charge d.u.t. v ds i d i g -3ma v gs .3 f 50k ? .2 f 12v current regulator same type as d.u.t. current sampling resistors + - p-channel 2.0 3.0 4.0 5.0 6.0 7.0 -v gs, gate -to -source voltage (v) 0.08 0.12 0.16 0.20 0.24 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( ? ) i d = -2.2a 0246810 -i d , drain current (a) 0.10 0.20 0.30 0.40 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( ? ) v gs = -2.5v v gs = -4.5v
irf5851pbf 12 www.irf.com fig 30. threshold voltage vs. temperature fig 31 typical power vs. time p-channel -75 -50 -25 0 25 50 75 100 125 150 t j , temperature ( c ) 0.4 0.6 0.8 1.0 - v g s ( t h ) , v a r i a c e ( v ) i d = -250a 0.001 0.010 0.100 1.000 10.000 time (sec) 0 4 8 12 16 20 24 p o w e r ( w )
irf5851pbf www.irf.com 13

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" note: for the most current drawing please refer to ir website at: http://www.irf.com/package/
irf5851pbf 14 www.irf.com data and specifications subject to change without notice. this product has been designed and qualified for the consumer market. qualifications standards can be found on ir?s web site. ir world headquarters: 233 kansas st., el segundo, california 90245, usa tel: (310) 252-7105 tac fax: (310) 252-7903 visit us at www.irf.com for sales contact information . 04/2010

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